Here, complimentary is nothing but if we need an NPN transistor then its complimentary is PNP. The design of this circuit is very simple that needs two equal complementary transistors to work. It is one kind of multistage amplifier, frequently used in the amplification of audio within loudspeakers. Generally, a Class B amplifier is also called a push-pull amplifier. In this circuit, the S8050 transistor plays a key role through a Class B amplifier. The push-pull circuit using the S8050 transistor is shown below. Do not expose it to heat above 150 C & under -60 C.An appropriate base resistor should be used to restrict the flow of current at the base terminal to its necessary level.Similarly, the load in the circuit should operate under 0.7A/700mA.This transistor should operate below 20V to run safely within the circuits of electronic projects.Equivalent S8050 transistors are S9013 & 2N5830. Once the current supply is removed at the base terminal of the transistor then it will be turned off, so this phase is called a cut-off region.Īlternatives S8050 transistors are 2N2369, 2N3904, 2N3055, MPSA42, BC547, S9014, 2N3906, SS8050, etc. The typical voltage used across the VCE or VCB could be 20V & 30V correspondingly. Once this transistor is completely biased then it allows up to 700mA of current to supply across the emitter & collector terminals, so this phase is known as Saturation Region. A transistor can be biased once the current supply is provided to the base pin that must be restricted to 5mA. If the amplification is high then it is used for amplification.īut, the gain value at collector current will be 110 and the max current supply throughout the Collector terminal is 700mA, so we cannot control different loads which operate by suing above 700mA through this transistor. The max gain value of this transistor is 300 & this value will decide the capacity of amplification. In the S8050 NPN transistor, both the terminals like the emitter & collector will be reverse biased when the base pin is held at the ground and will be closed (Forward biased) when a signal is provided to the base pin. Transfer Ratio of forwarding Current/hFE Value is120.Operating temperature (Max) ranges from -65 to +150 C.Transition Frequency (fT) Max is 100 MHz.
Voltage from collector to base (VCB) Max is 30V.Voltage from collector to the emitter (VCE) max is 20V.Collector Current Max (IC) is 700mA/0.7A.Pin1 (Emitter): The flow of current will drain out using this terminal This transistor includes three pins where each pin and its functionality are discussed below. The pin configuration of the S8050 transistor & its symbol is shown below. For better performance of S8050 transistor, it must operate in forward bias condition otherwise Pin Configuration Here EB junction is forward biased whereas the CB junction is reverse biased. This transistor includes two PN junctions like EB and CB. So these transistors are available with two charge carriers like holes & electrons where the majority of charge carriers are electrons. Generally, transistors are available in two types like UJT & BJT where the S8050 transistor comes under BJT (Bipolar Junction Transistor) category. In the transistor, the small current at one terminal is mainly used to control the huge current at the remaining terminals. The base terminal in the transistor can be doped lightly whereas the collector terminal is doped moderately. These three transistor terminals are dissimilar in doping concentration wherever emitter is extremely doped as compared to both the terminals like collector and base. This transistor is a three-terminal component like emitter, base & collector which are used for external connection through different circuits.
S8050 is an NPN Transistor with high current & low voltage capabilities.
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